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  • InGaAs Photodetector Chip and TO-CAN
  • InGaAs PIN Photodetector
  • Lithium Niobate Phase Modulator

InGaAs PIN Photodetector

The key features

● Plane semiconductor design and medium passivation
● 3 pin coaxial streamline shape design
● Excellent noise characteristics and photoelectric performance
● Airtight packaging, 100% electric aging
● Low capacitance, low dark current, high responsiveness
● High reliability
● Low accord with GR468 - core
● With various types of connectors

Application field

● DWDM power monitoring
● High speed test system
● Measuring instrument
● Optical communication system
● Analog CATV & CDMA

Rated limit (T = 25℃)

Main performance index (T = 25℃)

Tel:14364483 / 0316-3312686
Address:85 Yifeng Street, Dongyan Suburb Development Zone, Beijing

Wechat Public Number

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